ADVANCING GaN DESIGN THROUGH INVESTMENTS IN MICROELECTRONICS SOLUTIONS

ACCELERATING INNOVATION IN GALLIUM NITRIDE RF POWER DESIGN

MEC Hubs

ARE YOU READY TO SHAPE THE FUTURE OF GaN?

The CA DREAMS and MMEC Hubs of the Microelectronics Commons program are announcing a GaN Prototype Accelerator Multi-Project Wafer (GaNPA MPW) Opportunity.  The GaNPA MPW Opportunity is designed to attract a broad spectrum of GaN power amplifier designers – both traditional and non-traditional – and stimulate innovation through a structured, mission-focused design exercise competition. For this initial Opportunity CA DREAMS and MMEC are partnering with the Northrop Grumman Microelectronics Center for access to their GaN15 PDK. The initiative will seek successful proposals that:

  • Lower barriers of entry to advanced GaN Technology

  • Engage with traditional and non-traditional GaN amplifier circuit designers

  • Foster domestic design and fabrication capability

  • Enable rigorous RF design practices
  • Provide a secure solution source for the benefit of National Security

CHALLENGE STATEMENT

The GaN Prototype Accelerator MPW Opportunity offers 16 mm2 to 25 mm2 die area in the Northrop Grumman Manufacturing Company GaN15 PDK via CA DREAMS MOSIS 2.0 and EDA tool access via MMEC DESIGN. Designers or teams are encouraged to define their own application and performance objectives. Proposals will be judged primarily on technical merit and intended market impact. Submissions should clearly outline the target application, design concept, and how the approach leverages advanced GaN technology or introduces a novel design solution. Teams must also highlight relevant design experience, familiarity with EDA tools, and proposed testing methodology. Proposals should also outline potential paths for technology transition and include a market impact. A “Quad” must accompany each submission summarizing proposed effort.

EXECUTION

On June 19th, during the 2025 International Microwave Symposium, the CA DREAMS and MMEC teams will host an Industry Day for the Commons GaN Prototype Accelerator MPW Opportunity. This session will provide information on the opportunity including MOSIS 2.0 MPW services, EDA tool access, and the Northrop Grumman Microelectronics Center GaN15 PDK.  The white paper submission process and selection criteria will also be outlined.

Up to 12 designs efforts will be selected. Designers will have one month to submit a white paper. Selections will be announced by July 31, 2025.

Submit White Paper & QUAD Chart

Selected teams will then have one month to:

  • Enroll in MOSIS 2.0 via CA DREAMS
  • Complete required NDAs with Northrop Grumman Manufacturing Center
  • Set up EDA tool access through MMEC DESIGN

Designers will have two months to complete their circuit designs, which must be submitted to MOSIS 2.0 for DRC and mask aggregation. Tapeout is scheduled for December 1, 2025. NGMC will fabricate the circuits and deliver die and lot PCM data by May 1, 2026.

Participants must evaluate PA performance and submit a final report comparing measurements to simulations. The report must include:

  • Full design data (schematics, test benches, simulation plots, GDS-II layout)
  • Tool and PDK versions used
  • Commentary on lessons learned (e.g., using MOSIS 2.0, DESIGN, foundry PDK/process)

GaNPA Industry Launch

The GaNPA MPW Team will be holding an Industry Launch Day during the International Microwave Symposium (IMS) on June 19th, 2025 in San Francisco, CA. This event will be held from 1:30 – 3:00pm PST.

Location
W San Francisco Hotel 
181 3rd St      (Diagonally across the street from IMS/Moscone Center)
Industry Room (2nd Floor) 

Schedule
1:45 – 3:15   GaNPA Industry Launch
3:15 – 4:00   Follow-up conversations

 

Industry Day Slides GaNPA Quad