MEC Hubs
ARE YOU READY TO SHAPE THE FUTURE OF GaN?
The CA DREAMS and MMEC Hubs of the Microelectronics Commons program are announcing a GaN Prototype Accelerator Multi-Project Wafer (GaNPA MPW) Opportunity. The GaNPA MPW Opportunity is designed to attract a broad spectrum of GaN power amplifier designers – both traditional and non-traditional – and stimulate innovation through a structured, mission-focused design exercise competition. For this initial Opportunity CA DREAMS and MMEC are partnering with the Northrop Grumman Microelectronics Center for access to their GaN15 PDK. The initiative will seek successful proposals that:
-
Lower barriers of entry to advanced GaN Technology
-
Engage with traditional and non-traditional GaN amplifier circuit designers
-
Foster domestic design and fabrication capability
- Enable rigorous RF design practices
- Provide a secure solution source for the benefit of National Security
CHALLENGE STATEMENT
The GaN Prototype Accelerator MPW Opportunity offers 16 mm2 to 25 mm2 die area in the Northrop Grumman Manufacturing Company GaN15 PDK via CA DREAMS MOSIS 2.0 and EDA tool access via MMEC DESIGN. Designers or teams are encouraged to define their own application and performance objectives. Proposals will be judged primarily on technical merit and intended market impact. Submissions should clearly outline the target application, design concept, and how the approach leverages advanced GaN technology or introduces a novel design solution. Teams must also highlight relevant design experience, familiarity with EDA tools, and proposed testing methodology. Proposals should also outline potential paths for technology transition and include a market impact. A “Quad” must accompany each submission summarizing proposed effort.
EXECUTION
2025 GaN Challenge Updates
The 2025 Selection Summary resulted in eight design teams selected for inclusion. Design concepts address a number of application areas including Ka-band, Q-band, and V-band power amplifiers for military electronic warfare (EW), Radar, and Comms along with FR2 and FR3 5G solutions. In addition to power amplifiers, multiplier and circulator designs were submitted. This variety of design concepts will effectively exercise the NGMC GaN15 process, CA DREAMS MOSIS 2.0, and MMEC’s Design Hub. The selected groups include:
- Michigan State University (MSU): A V-Band Load Modulated Power Amplifier for space-based EW systems with superior MMIC performance
- University of Illinois Urbana Champagne (UIUC): Integrated GaN Circulators
- University of Texas – Dallas (UTD): Switched-Mode High-Efficiency 24 GHz GaN Power Amplifier for Pulsed Wireless Power Beaming Applications
- University of Vermont (UVM): 28/39 GHz Dual-Band GaN Power Amplifier Design
- NxBeam: 32-38 GHz 10 W 150nm GaN Power Amplifier MMIC
- ReconRF #1: Q-Band AI-Accelerated GaN MMIC SSPA Design for Downlink SATCOM and Radar Systems
- ReconRF #2: V-Band AI-Accelerated GaN MMIC SSPA Design for Gateway Uplinks and Airborne Communications
- University of California, Los Angeles (UCLA): Integrated GaN Circulators
The Next GaNPA Challenge Is Coming
A new GaNPA Challenge launches in mid-2026, opening the door for innovators to shape the future of GaN technologies. This upcoming challenge will invite bold ideas, breakthrough approaches, and high-impact solutions from across the ecosystem.
Be the first to know when the call for white papers opens.
Join the GaNPA mailing list to receive early notifications, submission details, and key milestones—so you’re ready the moment it goes live.