Are You Ready to Shape the Future of GaN?
The CA DREAMS and MMEC Hubs of the Microelectronics Commons program in conjunction with the Northrop Grumman Microelectronics Center (NGMC) are announcing a GaN Prototype Accelerator Multi-Project Wafer (MPW) Opportunity. The GaN Challenge MPW Opportunity is designed to attract a broad spectrum of GaN power amplifier designers – both traditional and non-traditional – and stimulate innovation through a structured, mission-focused design exercisecompetition. The initiative will seek successful proposals that:objecives of the GaNPA MPW Opportunity are to:• Lower barriers of entry to advanced GaN Technology
- Engage with traditional and non-traditional GaN amplifier circuit designers
- Foster domestic design and fabrication capability
- Enable rigorous RF design practices
- Provide a secure solution source for the benefit of National Security
CHALLENGE STATEMENT
The Commons GaN Prototype Accelerator MPW Opportunityoffersaccess to EDA tools, Northrop Grumman Manufacturing Company GaN15 Power PDK, and 16 mm2 to 25 mm2 die area. . Designers or teams are encouraged to define their own application and performance objectives. Proposals will be judged primarily on technical merit and intended market impact.
Submissions should clearly outline the target application, design concept, and how the approach leverages advanced GaN technology or introduces a novel design solution. Teams must also highlight relevant design experience, familiarity with EDA tools, and proposed testing methodology.
Proposals should also outline potential paths for technology transition andand include a market impact. A summarized “Quad” must accompany each submission.summarizing proposed effort.
EXECUTION
On June 19th, during the 2025 International Microwave Symposium, the CA DREAMS and MMEC teams will host an Industry Day for the Commons GaN Prototype Accelerator MPW Opportunity. This session will provide information on the opportuntiy including MOSIS 2.0 MPW services, the Northrop Grumman Manufacturing Center GaN15 Power process, and EDA tool access. The white paper submission process and selection criteria will also be outlined.
Up to 12 designs efforts will be selected. Designers will have one month to submit a white paper via https://ganchallenge.com[DV1] . Selections will be announced by July 31, 2025.
Selected teams will then have one month to:
- Enroll in MOSIS 2.0 via CA DREAMS
- Complete required NDAs with Northrop Grumman Manufacturing Center
- Set up EDA tool access through MMEC DESIGN
Designers will have two months to complete their circuit designs, which must be submitted to MOSIS 2.0 for DRC and mask aggregation. Tapeout is scheduled for December 1, 2025. NGMC will fabricate the circuits and deliver die and lot PCM data by May 1, 2026.
Participants must evaluate PA performance and submit a final report comparing measurements to simulations. The report must include:
- Full design data (schematics, test benches, simulation plots, GDS-II layout)
- Tool and PDK versions used
- Commentary on lessons learned (e.g., using MOSIS 2.0, DESIGN, Northrop Grumman Manufacturing Center GaN15 Power PDK)